Cerâmica varistora à base de SnO2 dopada com Pr6O11

Abstract

In this work it was investigated the influence the in influence of the doping Pr6O11 in the electrical conductivity and in the microstructural properties in the basic ternary system (98,95 – x)%Sn02 1,0% Co0 0,05%Ta205. The used concentration of the doping Pr6011 had varied in 0,05%, 0.5% in mol, remaining constant the concentrations for the Co0 and Ta205. The processing applied was the conventional method of mixture of oxides in ambient atmosphere. The samples had been conformed in 50 MPa and sintered in 1350°C for 2 hours. After the sintering the densification of ceramics was verified with a value of 93,63% for the system with 0,1% in mol of Pr6011. The study of the electrical properties for the varistor system Sn02.Co0.Ta205 Pr6011 was carried out in continuous current in the ambient temperature and in function of the temperature. It was observed that the variation in the concentration of Pr6011 modifies the electrical behavior of the ceramics. The electrical parameters found are of [alfa]= 8,0, Er= 319 volts/cm and Vb= 0,66 volts/barrier for basic ternary system and [alfa]= 17,0 Er= 853 volts/cm and Vb= 1,15 volts/barrier with the addition of 0,10% in mol of Pr6011. The system with 0,05% mol 0.1% in mol Pr6011 presents the same value of the non linearity coefficient of the system with 0,1% in mol, however, with lower values of rupture tension and barrier tension (Er= 708 volts/cm and Vb= 0,98 volts/barrier). To concentration above of 0,1% in mol of Pr6011, the increase of the concentration of this doping, starts to be deleterious to the varistor characteristics. This effects is due to the increase in the concentration of the stannate of praseodymium phase (Pr2Sn207). This crystalline phase with the cassiterita phase (Sn02)was characterized by DRX and EDS and quantified by the refinement of Rietveld.